Scanning tunneling microscope study of capped quantum dots

Applied Physics Letters

Volumn 85, Issue 12, 2004, Pages 2355-2357

  Song, H Z ^a,b   Kawabe, M ^c   Okada, Y ^b   Yoshizaki, R ^b   Usuki, T ^a   Nakata, Y ^a   Ohshima, T ^a   Yokoyama, N ^a,b,c  

^a FUJITSU LABORATORIES LTD   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; ELECTRONIC STRUCTURE; INDIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM ARSENIDE;

CAPPED QUANTUM DOTS; CRYOGENIC TEMPERATURES; POSTANNEALING; WETTING LAYERS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 7244236481     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1791340     Document Type: Article

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