A bias-dependent single-event compact model implemented into BSIM4 and a 90 nm CMOS process design kit

IEEE Transactions on Nuclear Science

Volumn 56, Issue 6, 2009, Pages 3152-3157

  Kauppila, Jeffrey S ^a   Sternberg, Andrew L ^a   Alles, Michael L ^a   Matt Francis, A ^b   Holmes, Jim ^b   Amusan, Oluwole A ^a   Massengill, Lloyd W ^a  

^a VANDERBILT UNIVERSITY   (United States)

^b Lynguent Inc   (United States)

Author keywords

Integrated circuit radiation effects; Mosfets; Single event effects; Spice

Indexed keywords

90NM CMOS; COMPACT MODEL; INTEGRATED CIRCUIT RADIATION EFFECTS; MIXED MODE; MOSFETS; SIMULATION COMPARISON; SINGLE EVENT EFFECTS; SINGLE-EVENTS; TRANSISTOR MODEL;

INTEGRATED CIRCUITS; MOSFET DEVICES; PROCESS DESIGN; SIMULATORS; SPICE;

RADIATION EFFECTS;

EID: 72349097010     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2009.2033798     Document Type: Conference Paper

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