Dynamic hysteresis scaling of ferroelectric Pb0.9Ba 0.1(Zr0.52Ti0.48)O3 thin films

Journal of Physics Condensed Matter

Volumn 21, Issue 48, 2009, Pages

  Guo, Y Y ^a   Wei, T ^a   He, Q Y ^b   Liu, J M ^a,b,c  

^a NANJING UNIVERSITY   (China)

^b SOUTH CHINA NORMAL UNIVERSITY   (China)

^c INTERNATIONAL CENTRE FOR MATERIALS PHYSICS   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOLARIZATION FIELDS; DOMAIN REVERSAL; DYNAMIC BEHAVIORS; DYNAMIC HYSTERESIS; EXTERNAL ELECTRIC FIELD; FREQUENCY EXPONENT; HIGH FREQUENCY; HYSTERESIS AREA; LOW FREQUENCY; LOW FREQUENCY RANGE; POLARIZATION FATIGUE; POWER LAW; POWER LAW SCALINGS; PT ELECTRODE; SCALING BEHAVIOR; SI SUBSTRATES; TEMPERATURE SCALING;

BARIUM; ELECTRIC FIELDS; FERROELECTRIC FILMS; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HYSTERESIS; LEAD; PLATINUM; POLARIZATION; SEMICONDUCTING SILICON COMPOUNDS; ZIRCONIUM;

FILM PREPARATION;

EID: 72249111099     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/21/48/485901     Document Type: Article

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