First-principles calculation of impurity doping into Mg2Ge

Journal of Alloys and Compounds

Volumn 485, Issue 1-2, 2009, Pages 764-768

  Tani, Jun ichi ^a   Takahashi, Masanari ^a   Kido, Hiroyasu ^a  

^a OSAKA MUNICIPAL TECHNICAL RESEARCH INSTITUTE   (Japan)

Author keywords

Computer simulations; Electrical transport; Impurities in semiconductors; Intermetallics; Thermoelectric materials

Indexed keywords

CONDUCTION TYPE; ELECTRICAL TRANSPORT; FIRST-PRINCIPLES CALCULATION; FORMATION ENERGIES; IMPURITIES IN; IMPURITIES IN SEMI CONDUCTORS; IMPURITY DOPING; N-TYPE DOPANTS; P-TYPE DOPANT; THERMOELECTRIC MATERIAL; THERMOELECTRIC MATERIALS;

COMPUTATIONAL METHODS; COMPUTER SIMULATION; DENSITY FUNCTIONAL THEORY; FLUORINE CONTAINING POLYMERS; GERMANIUM; INTERMETALLICS; RUBIDIUM; SCANDIUM; SEMICONDUCTOR DOPING; SILVER; SODIUM; THERMOELECTRIC EQUIPMENT; THERMOELECTRICITY;

IMPURITIES;

EID: 72049122644     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.06.099     Document Type: Article

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