Controlling nanogap quantum dot photoconductivity through optoelectronic trap manipulation

Nano Letters

Volumn 9, Issue 12, 2009, Pages 4191-4197

  Willis, Lauren J ^a   Fairfield, Jessamyn A ^a   Dadosh, Tali ^a   Fischbein, Michael D ^a   Drndic, Marija ^a  

^a UNIVERSITY OF PENNSYLVANIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CDSE/ZNS; CHARGE TRAP; CONTROL AND OPTIMIZATION; CORE-SHELL; LENGTH SCALE; NANO-GAP; NANOGAPS; NANOSCALE APPLICATIONS; NANOSCALE DEVICE; OPTOELECTRONIC METHOD; PHOTOCURRENT RESPONSE; PHYSICAL PROCESS; QUANTUM DOT; SEMICONDUCTING MATERIALS; SEMICONDUCTOR NANOCRYSTALS; TRAP STATE; TUNABILITIES;

ELECTRONIC PROPERTIES; IMPURITIES; NANOCRYSTALS; NANOSTRUCTURED MATERIALS; PHOTOCONDUCTIVITY; SEMICONDUCTOR QUANTUM DOTS;

OPTICAL PROPERTIES;

NANOMATERIAL; QUANTUM DOT;

ARTICLE; CHEMICAL MODEL; CHEMISTRY; COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELD; LIGHT; RADIATION EXPOSURE;

COMPUTER SIMULATION; ELECTRIC CONDUCTIVITY; ELECTROMAGNETIC FIELDS; LIGHT; MODELS, CHEMICAL; NANOSTRUCTURES; QUANTUM DOTS;

EID: 71949129610     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl9024209     Document Type: Article

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