Origin(s) of the apparent high permittivity in CaCu3 Ti 4 O12 ceramics: Clarification on the contributions from internal barrier layer capacitor and sample-electrode contact effects

Journal of Applied Physics

Volumn 106, Issue 10, 2009, Pages

  Li, Ming ^a   Shen, Zhijian ^b   Nygren, Mats ^b   Feteira, Antonio ^a   Sinclair, Derek C ^a   West, Anthony R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b STOCKHOLM UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

CONVENTIONAL SINTERING; EFFECTIVE PERMITTIVITY; ELECTRODE CONTACTS; ELECTRODE POLARIZATIONS; GRAIN BOUNDARY RESISTIVITY; HIGH PERMITTIVITY; INTERNAL BARRIERS; MEASURING FREQUENCY; PROCESSING CONDITION;

CAPACITANCE; CAPACITORS; CERAMIC MATERIALS; GRAIN BOUNDARIES; POLARIZATION; SPARK PLASMA SINTERING;

PERMITTIVITY;

EID: 71749094134     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3253743     Document Type: Article

References (30)

1. M. A. Subramanian, D. Li, N. Duan, B. A. Reisner, and A. W. Sleight, J. Solid State Chem. 0022-4596 151, 323 (2000). 10.1006/jssc.2000.8703
2. A. P. Ramirez, M. A. Subramanian, M. Gardel, G. Blumberg, D. Li, T. Vogt, and S. M. Shapiro, Solid State Commun. 0038-1098 115, 217 (2000). 10.1016/S0038-1098(00)00182-4 (Pubitemid 30872010)
3. C. C. Homes, T. Vogt, S. M. Shapiro, S. Wakimoto, and A. P. Ramirez, Science 0036-8075 293, 673 (2001). 10.1126/science.1061655
4. D. C. Sinclair, T. B. Adams, F. D. Morrison, and A. R. West, Appl. Phys. Lett. 0003-6951 80, 2153 (2002). 10.1063/1.1463211 (Pubitemid 34635953)
5. T. B. Adams, D. C. Sinclair, and A. R. West, Adv. Mater. 0935-9648 14, 1321 (2002). 10.1002/1521-4095(20020916)14:18<1321::AID-ADMA13213.0.CO;2-P
6. N. Kolev, R. P. Bontchev, A. J. Jacobson, V. N. Popov, V. G. Hadjiev, A. P. Litvinchuk, and M. N. Iliev, Phys. Rev. B 0163-1829 66, 132102 (2002). 10.1103/PhysRevB.66.132102
7. L. X. He, J. B. Neaton, M. H. Cohen, D. Vanderbilt, and C. C. Homes, Phys. Rev. B 0163-1829 65, 214112 (2002). 10.1103/PhysRevB.65.214112
8. S. Y. Chung, I. D. Kim, and S. J. L. Kang, Nature Mater. 1476-1122 3, 774 (2004). 10.1038/nmat1238
9. T. B. Adams, D. C. Sinclair, and A. R. West, Phys. Rev. B 0163-1829 73, 094124 (2006). 10.1103/PhysRevB.73.094124
10. T. B. Adams, D. C. Sinclair, and A. R. West, J. Am. Ceram. Soc. 0002-7820 89, 3129 (2006). 10.1111/j.1551-2916.2006.01184.x (Pubitemid 44434783)
11. S. F. Shao, J. L. Zhang, P. Zheng, W. L. Zhong, and C. L. Wang, J. Appl. Phys. 0021-8979 99, 084106 (2006). 10.1063/1.2191447 (Pubitemid 43746307)
12. P. Lunkenheimer, R. Fichtl, S. G. Ebbinghaus, and A. Loidl, Phys. Rev. B 0163-1829 70, 172102 (2004). 10.1103/PhysRevB.70.172102 (Pubitemid 40116095)
13. S. Krohns, P. Lunkenheimer, S. G. Ebbinghaus, and A. Loidl, Appl. Phys. Lett. 0003-6951 91, 022910 (2007). 10.1063/1.2757098
14. S. Krohns, P. Lunkenheimer, S. G. Ebbinghaus, and A. Loidl, J. Appl. Phys. 0021-8979 103, 084107 (2008). 10.1063/1.2902374 (Pubitemid 351623611)
15. M. Li, A. Feteira, D. C. Sinclair, and A. R. West, Appl. Phys. Lett. 0003-6951 91, 132911 (2007). 10.1063/1.2769954 (Pubitemid 47502598)
16. F. Greuter and G. Blatter, Semicond. Sci. Technol. 0268-1242 5, 111 (1990). 10.1088/0268-1242/5/2/001
17. C. F. Yang, Jpn. J. Appl. Phys., Part 1 0021-4922 36, 188 (1997). 10.1143/JJAP.36.188
18. E. H. Rhoderick and R. H. Williams, Metal-Semiconductor Contacts, 2nd ed. (Clarendon, Oxford, 1988).
19. S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, 3rd ed. (Wiley, New York, 2006).
20. L. J. Brillson, J. Vac. Sci. Technol. A 0734-2101 25, 943 (2007). 10.1116/1.2432348 (Pubitemid 47142918)
21. M. Li, A. Feteira, and D. C. Sinclair, J. Appl. Phys. 0021-8979 105, 114109 (2009). 10.1063/1.3143014
22. K. Ip, K. H. Baik, Y. W. Heo, D. P. Norton, S. J. Pearton, J. R. LaRoche, B. Luo, F. Ren, and J. M. Zavada, J. Vac. Sci. Technol. B 1071-1023 21, 2378 (2003). 10.1116/1.1621651
23. K. Ip, B. P. Gila, A. H. Onstine, E. S. Lambers, Y. W. Heo, K. H. Baik, D. P. Norton, S. J. Pearton, S. Kim, J. R. LaRoche, and F. Ren, Appl. Phys. Lett. 0003-6951 84, 5133 (2004). 10.1063/1.1764940
24. Q. L. Gu, C. C. Ling, X. D. Chen, C. K. Cheng, A. M. C. Ng, C. D. Beling, S. Fung, A. B. Djurisic, L. W. Lu, G. Brauer, and H. C. Ong, Appl. Phys. Lett. 0003-6951 90, 122101 (2007). 10.1063/1.2715025 (Pubitemid 46482234)
25. J. S. Wright, R. Khanna, L. F. Voss, L. Stafford, B. P. Gila, D. P. Norton, S. J. Pearton, H. T. Wang, S. Jang, T. Anderson, J. J. Chen, B. S. Kang, F. Ren, H. Shen, J. R. LaRoche, and K. Ip, Appl. Surf. Sci. 0169-4332 253, 3766 (2007). 10.1016/j.apsusc.2006.07.090 (Pubitemid 46177363)
26. Z. J. Shen, Z. Zhao, H. Peng, and M. Nygren, Nature (London) 0028-0836 417, 266 (2002). 10.1038/417266a (Pubitemid 34534704)
27. M. Li, A. Feteira, and D. C. Sinclair, J. Appl. Phys. 0021-8979 98, 084101 (2005). 10.1063/1.2089159
28. M. C. Ferrarelli, D. C. Sinclair, A. R. West, H. A. Dabkowska, A. Dabkowski, and G. M. Luke, J. Mater. Chem. 0959-9428 19, 5916 (2009). 10.1039/b910871h
29. J. Mizusaki, K. Amano, S. Yamauchi, and K. Fueki, Solid State Ionics 0167-2738 22, 313 (1987). 10.1016/0167-2738(87)90149-4
30. J. Mizusaki, K. Amano, S. Yamauchi, and K. Fueki, Solid State Ionics 0167-2738 22, 323 (1987). 10.1016/0167-2738(87)90150-0