Carrier transport in SiC crystals and radiation detectors as affected by defect traps and inhomogeneities

Materials Science and Engineering: B

Volumn 165, Issue 1-2, 2009, Pages 34-37

  Kazukauskas V ^a   Kalendra, V ^a   Vaitkus, J V ^a  

^a VILNIUS UNIVERSITY   (Lithuania)

Author keywords

Defect formation; Electric field effect; Electrical measurements; Photoconduction; Silicon carbide

Indexed keywords

ACTIVATION ENERGY; CARRIER TRANSPORT; DEFECTS; ENERGY GAP; RADIATION DETECTORS; SINGLE CRYSTALS;

CARRIER TRAPPING; CARRIERS TRANSPORT; DEFECT LEVELS; DEFECT TRAPS; DEFECTS FORMATION; ELECTRICAL MEASUREMENT; INHOMOGENEITIES; PHOTOCONDUCTION; SIC SINGLE CRYSTALS; SINGLE RADIATION;

SILICON CARBIDE;

EID: 71749093788     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2009.01.018     Document Type: Review

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