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Applied Physics B: Lasers and Optics

Volumn 98, Issue 1, 2010, Pages 77-81

Nonlinear absorption in undoped and Ge doped layered GaSe semiconductor crystals

(4) Yuksek M a Elmali, A a Karabulut, M b Mamedov, G M b

a ANKARA UNIVERSITY (Turkey)

b KAFKAS UNIVERSITY (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

1064 NM; BRIDGMAN; GASE CRYSTALS; LASER PULSE DURATION; NONLINEAR ABSORPTION COEFFICIENT; NONLINEAR ABSORPTION PROPERTIES; NONLINEAR ABSORPTIONS; P-TYPE; PULSE DURATIONS; QUARTZ AMPOULE; SATURABLE ABSORPTION; SEMICONDUCTOR CRYSTALS; STARTING MATERIALS; STOICHIOMETRIC MIXTURES; TWO-PHOTON ABSORPTIONS; Z-SCAN TECHNIQUE;

ABSORPTION; CRYSTALS; GERMANIUM; LASER PULSES; LIGHT ABSORPTION; LUMINESCENCE OF ORGANIC SOLIDS; OXIDE MINERALS; PULSED LASER APPLICATIONS; QUARTZ; SEMICONDUCTING GERMANIUM;

MULTIPHOTON PROCESSES;

EID: 71249144342 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-009-3665-y Document Type: Article

Times cited : (24)

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