Effect of the abnormal electric field induced by the passive layer on imprint failures of ferroelectric capacitors

Physica Status Solidi - Rapid Research Letters

Volumn 3, Issue 7-8, 2009, Pages 251-253

  Zheng, X J ^a   Yin, W ^a   Zhang T , ^b   Chen, Y Q ^a   Tang, M H ^a   Sun, J ^a  

^a XIANGTAN UNIVERSITY   (China)

^b JILIN UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFERENT THICKNESS; FERROELECTRIC CAPACITORS; FERROELECTRIC LAYERS; METAL STRUCTURES; PASSIVE LAYER; SAWYER-TOWER CIRCUIT; THICKNESS RATIO; TIME POINTS;

CAPACITANCE; CAPACITORS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ENGINEERING EXHIBITIONS; FERROELECTRIC DEVICES; FERROELECTRIC THIN FILMS; FERROELECTRICITY; HYSTERESIS; HYSTERESIS LOOPS; MAGNETIC MATERIALS; POLARIZATION; STRUCTURAL METALS;

FERROELECTRIC FILMS;

EID: 71149120747     PISSN: 18626254     EISSN: 18626270     Source Type: Journal    
DOI: 10.1002/pssr.200903194     Document Type: Article

References (9)

1. J. F. Scott, Science 315, 945 (2007).
2. C. K. Wong and F. G. Shin, Appl. Phys. Lett. 86, 042901 (2005).
3. A. Kumar, R. S. Katiyar, R. N. Premnath, C. Rinaldi, and J. F. Scott. J. Mater. Sci. (2009), DOI: 10.1007/s10853-009-3503-y.
4. B. H. Park, T. W. Noh, J. Lee, C. Y. Kim, and W. Jo, Appl. Phys. Lett. 70, 1101 (1997).
5. Y. Xu, C. J. Chen, R. Xu, and J. D. Mackenzie, J. Appl. Phys. 67, 2985 (1990).
6. T. Q. Lv and W. W. Cao, Microelectron. Eng. 66, 818 (2003).
7. Y. Zhou, H. K. Chan, C. H. Lam, and F. G. Shin, J. Appl. Phys. 98, 024111 (2005).
8. Z. Ye, M. H. Tang, Y. C. Zhou, X. J. Zheng, C. C. Ping, et al., Appl. Phys. Lett. 90, 042902 (2007).
9. W. B. Wu, K. H. Wong, and C. L. Choy, Appl. Phys. Lett. 85, 5013 (2004).