Low-power, high-speed Mach-Zehnder modulator in silicon

IEEE International Conference on Group IV Photonics GFP

Volumn , Issue , 2006, Pages 164-166

  Spector, S J ^a   Lyszczarz, T M ^a   Geis, M W ^a   Lennon, D M ^a   Yoon, J ^a   Grein, M E ^a   Schulein, R T ^a   Gan, Fuwan ^a   Kaertner, Franz ^a  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

LIGHT MODULATION; PHOTONICS; SILICON;

HIGH SPEED; INPUT POWER; LOW POWER; MACH ZEHNDER MODULATOR; MODULATION DEPTH;

LIGHT MODULATORS;

EID: 78649742470     PISSN: 19492081     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/group4.2006.1708200     Document Type: Conference Paper

References (4)

1. L. Liao, D. Damara-Rubio, M. Morse, A. Liu, and D. Hodge. "High speed silicon Mach-Zehnder modulator".Optics Express. 13, 3119-2135 (2005).
2. Q. Xu, B. Schmidt, S. Pradhan, and M. Lipson., "Micrometre-scale silicon electro-optic modulator", Nature 435, 325-327 (2005).
3. R. A. Soref and B. R. Bennett, "Electrooptical effects in silicon," IEEE J. Quantum Electron. QE-23, 123-129 (1987).
4. F. W. Gan, F. X. Kärtner, "High-Speed Silicon Electrooptic Modulator Design", IEEE Photonics Technology Letter. 17, 1007-1009 (2005).