Growth and characteristics of hydrogenated In-doped ZnO thin films by pulsed DC magnetron sputtering

Applied Surface Science

Volumn 256, Issue 5, 2009, Pages 1589-1594

  Park, Young Ran ^a   Kim, Juho ^b   Kim, Young Sung ^c  

^a Konkuk University   (South Korea)

^b Korea Research Institute of Chemical Technology   (South Korea)

^c Sungkyunkwan University   (South Korea)

Author keywords

Film; FT IR; Hydrogen effect; In doped; Micro Raman; Zinc oxide (ZnO)

Indexed keywords

CARRIER CONCENTRATION; FILMS; HYDROGEN; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; ZINC OXIDE;

CHARGE COMPENSATION; DOPED ZNO THIN FILMS; HYDROGEN EFFECT; HYDROGEN IMPURITY; MICRO-RAMAN; PHYSICAL CHARACTERISTICS; PULSED DC MAGNETRON SPUTTERING; ZINC OXIDE (ZNO);

THIN FILMS;

EID: 70849083667     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.09.026     Document Type: Article

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