An empirical potential approach to structural stability of GaN x As 1-x thin films on GaAs(1 1 1)

Applied Surface Science

Volumn 244, Issue 1-4, 2005, Pages 170-173

  Ito, Tomonori ^a   Suda, Takashi ^a   Akiyama, Toru ^a   Nakamura, Kohji ^a  

^a MIE UNIVERSITY   (Japan)

Author keywords

Computer simulation; GaN x As 1 x; Structural phase transition; Thin films

Indexed keywords

COMPUTER SIMULATION; ESTIMATION; FILM GROWTH; PHASE TRANSITIONS; SEMICONDUCTING GALLIUM ARSENIDE; SOLUBILITY; THIN FILMS;

GANXAS1-X; INTERFACE STRUCTURE; STRAIN ENERGY; STRUCTURE PHASE TRANSITION;

SURFACE STRUCTURE;

EID: 15844421975     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.09.136     Document Type: Conference Paper

References (16)

1. M. Kondow, K. Uomi, A. Niwa, T. Kitatani, S. Watahiki, and Y. Yazawa Jpn. J. Appl. Phys. 35 1996 1273
2. J. Neugebauer, C.G. Van de Walle, Phys. Rev. B 51 (1995) 10, 568.
3. C.T. Foxon, T.S. Cheng, S.V. Novikov, D.E. Lacklison, L.C. Jenkins, D. Johnston, J.W. Orton, S.E. Hooper, N. Babaali, T.L. Tansley, and V.V. Tret'yakov J. Cryst. Growth 150 1995 892
4. W.G. Bi, and C.W. Tu Appl. Phys. Lett. 70 1997 1608
5. R. Kuroiwa, H. Asahi, K. Asami, S.J. Kim, K. Iwata, and S. Gonda Appl. Phys. Lett. 73 1998 2630
6. Y. Kangawa, T. Ito, A. Mori, and A. Koukitu J. Cryst. Growth 220 2000 401
7. J.C. Phillips Rev. Mod. Phys. 42 1970 317
8. A. Zunger Phys. Rev. B 22 1980 5839
9. C.-Y. Yeh, Z.W. Lu, S. Froyen, and A. Zunger Phys. Rev. B 46 1992 10086
10. T. Ito Jpn. J. Appl. Phys. 37 1998 L1217
11. T. Ito, K. Shiraishi, and A. Taguchi J. Cryst. Growth 227/228 2001 366
12. T. Ito, and Y. Kangawa J. Cryst. Growth 235 2002 149
13. T. Suda, Y. Kanagawa, K. Nakamura, and T. Ito J. Cryst. Growth 258 2003 277
14. T. Ito, K.E. Khor, and S. Das Sarma Phys. Rev. B 41 1990 3893
15. T. Ito J. Appl. Phys. 77 1995 4947
16. G.B. Stringfellow J. Cryst. Growth 27 1974 21