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Applied Physics A: Materials Science and Processing

Volumn 97, Issue 4, 2009, Pages 821-828

Structural, electrical and optical properties of boron doped ZnO thin films using LSMCD method at room temperature

(5) Kim, Gilho a Bang, Jungsik b Kim, Yunseok a Rout, S K a Woo, Seong Ihl a

a Korea Advanced Institute of Science and Technology (KAIST) (South Korea)

b LG Chemical Ltd (South Korea)

Author keywords

73.50. h; 73.61. r; 78.20. e; 81.16.Be; PACS: 68.55.Ln

Indexed keywords

73.50.-H; 78.20.-E; BORON-DOPED; ELECTRICAL AND OPTICAL PROPERTIES; ELECTRICAL PROPERTY; GRAIN SIZE; HALL EFFECT MEASUREMENT; LIQUID SOURCES; LOW RESISTIVITY; OPTIMAL RESULTS; POLYCRYSTALLINE; ROOM TEMPERATURE; SCANNING ELECTRONS; SEM; UV-VISIBLE SPECTROPHOTOMETRY; VISIBLE LIGHT;

ATOMIC FORCE MICROSCOPY; BORON; DEPOSITION; ELECTRIC PROPERTIES; HALL EFFECT; LIGHT; MAGNETIC FIELD EFFECTS; RAMAN SPECTROSCOPY; THIN FILMS; X RAY DIFFRACTION ANALYSIS; ZINC; ZINC OXIDE;

OPTICAL PROPERTIES;

EID: 70450253333 PISSN: 09478396 EISSN: 14320630 Source Type: Journal
DOI: 10.1007/s00339-009-5317-9 Document Type: Article

Times cited : (47)

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