Effects of grain boundary barrier in ZnO/Si heterostructure

Chinese Physics Letters

Volumn 26, Issue 11, 2009, Pages

  Liu, Bing Ce ^a   Liu, Ci Hui ^a   Fu, Zhu Xi ^a   Yi, Bo ^a  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; GRAIN BOUNDARIES; II-VI SEMICONDUCTORS; SILICON COMPOUNDS; SURFACE DEFECTS; ZINC OXIDE;

CAPACITANCE VOLTAGE; CURRENT-VOLTAGE; DEEP LEVEL CENTERS; DEEP LEVELS TRANSIENT SPECTROSCOPY; GRAIN BARRIER; GRAIN-BOUNDARY BARRIERS; SPECTROSCOPY MEASUREMENTS; VOLTAGE CURRENT; ZNO MICROSTRUCTURES; ZNO/ SI HETEROSTRUCTURE;

DEEP LEVEL TRANSIENT SPECTROSCOPY;

EID: 70450237387     PISSN: 0256307X     EISSN: 17413540     Source Type: Journal    
DOI: 10.1088/0256-307X/26/11/117101     Document Type: Article

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