Mobile handset power amplifiers

IEEE Microwave Magazine

Volumn 10, Issue 7, 2009, Pages

  Franco, Marc ^a  

^a RF MICRO DEVICES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE DEVICES; BIAS CONTROL; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; COST EFFECTIVE; FULLY INTEGRATED; GALLIUM ARSENIDE; HIGH-DENSITY; HIGH-DENSITY INTERCONNECTION; HIGH-PERFORMANCE INTEGRATED CIRCUITS; IMPEDANCE MATCHING NETWORK; LEAD FRAME PACKAGES; LOW COSTS; LOW TEMPERATURE COFIRED CERAMIC SUBSTRATES; MOBILE HANDSETS; MOBILE TERMINAL; POWER SUPPLY; SEMICONDUCTOR TECHNOLOGY; SYSTEM-IN-A-PACKAGE; WIRELESS MOBILE COMMUNICATIONS;

ARSENIC COMPOUNDS; BIPOLAR TRANSISTORS; CERAMIC DIES; DIES; GALLIUM ALLOYS; GALLIUM COMPOUNDS; HETEROJUNCTION BIPOLAR TRANSISTORS; HETEROJUNCTIONS; IMPEDANCE MATCHING (ELECTRIC); INTEGRATED CIRCUITS; MINIATURE INSTRUMENTS; MOBILE TELECOMMUNICATION SYSTEMS; MULTILAYERS; POWER AMPLIFIERS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; TELEPHONE SETS; WIRELESS NETWORKS;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 70450237064     PISSN: 15273342     EISSN: None     Source Type: Trade Journal    
DOI: 10.1109/MMM.2009.934687     Document Type: Article

References (9)

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