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Volumn , Issue , 2006, Pages 8-13

A new mechanism for core device failure during CDM ESD events

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE FAILURES; ESD PROTECTION; ESD TEST; GATE OXIDE; I/O BUFFER; LONG LINE; MEASURED RESULTS; NETLIST; NEW MECHANISMS; ON CHIPS;

EID: 70450209973     PISSN: 07395159     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/EOSESD.2006.5256809     Document Type: Conference Paper
Times cited : (8)

References (18)
  • 3
    • 18344404381 scopus 로고    scopus 로고
    • Modeling of Short-Gap ESD Under Consideration of Different Discharge Mechanisms
    • August
    • S. Bönisch, W. Kalkner, and D. Pommerenke, "Modeling of Short-Gap ESD Under Consideration of Different Discharge Mechanisms," IEEE Trans. on Plasma Science, vol. 31, pp. 736-744, August 2003.
    • (2003) IEEE Trans. on Plasma Science , vol.31 , pp. 736-744
    • Bönisch, S.1    Kalkner, W.2    Pommerenke, D.3
  • 4
    • 70450166883 scopus 로고    scopus 로고
    • 4.5GHz Measurement of Transition Duration and Frequency Spectra Due to Small Gap Discharge as Low Voltage ESD
    • Las Vegas, NV
    • K. Kawamata, S. Minegishi, and A. Haga, "4.5GHz Measurement of Transition Duration and Frequency Spectra Due to Small Gap Discharge as Low Voltage ESD," in Proc. 25th Annual Intl. EoS/ESD Symp., Las Vegas, NV, 2003, pp. 173-178.
    • (2003) Proc. 25th Annual Intl. EoS/ESD Symp , pp. 173-178
    • Kawamata, K.1    Minegishi, S.2    Haga, A.3
  • 6
    • 77950812356 scopus 로고    scopus 로고
    • C. J. Brennan, J. Kozhaya, R. Proctor, J. Sloan, S. Chang, J. Sundquist, and T. Lowe, ESD Design Automation for a 90nm ASIC Design System, in Proc. 26th Annual Intl. EoS/ESD Symp., Dallas, TX, 2004, pp. 166-173.
    • C. J. Brennan, J. Kozhaya, R. Proctor, J. Sloan, S. Chang, J. Sundquist, and T. Lowe, "ESD Design Automation for a 90nm ASIC Design System," in Proc. 26th Annual Intl. EoS/ESD Symp., Dallas, TX, 2004, pp. 166-173.
  • 8
    • 70450139758 scopus 로고    scopus 로고
    • FastScan, Mentor Graphics
    • FastScan, Mentor Graphics.
  • 9
    • 0032309715 scopus 로고    scopus 로고
    • Simulation of complete CMoS I/o circuit response to CDM stress
    • Reno, NV
    • S. Beebe, "Simulation of complete CMoS I/o circuit response to CDM stress," in Proc. 20th Annual Intl. EoS/ESD Symp., Reno, NV, 1998, pp. 259-270.
    • (1998) Proc. 20th Annual Intl. EoS/ESD Symp , pp. 259-270
    • Beebe, S.1
  • 10
    • 0034538958 scopus 로고    scopus 로고
    • Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions
    • Anaheim, CA
    • J. Wu, P. Juliano, and E. Rosenbaum, "Breakdown and latent damage of ultra-thin gate oxides under ESD stress conditions," in Proc. 22nd Annual Intl. EoS/ESD Symp., Anaheim, CA, 2000, pp. 287-295.
    • (2000) Proc. 22nd Annual Intl. EoS/ESD Symp , pp. 287-295
    • Wu, J.1    Juliano, P.2    Rosenbaum, E.3
  • 13
    • 0004067114 scopus 로고    scopus 로고
    • Mineola, New York: Dover Publications Inc
    • F. W. Grover, Inductance Calculations, Mineola, New York: Dover Publications Inc., 2004.
    • (2004) Inductance Calculations
    • Grover, F.W.1
  • 15
    • 70450130752 scopus 로고    scopus 로고
    • NET-AN, oEA International, Inc
    • NET-AN, oEA International, Inc. 2003.
    • (2003)
  • 16
    • 70450214503 scopus 로고    scopus 로고
    • th Annual International EoS/ESD Symposium, 2006.
    • th Annual International EoS/ESD Symposium, 2006.
  • 17
    • 0032202447 scopus 로고    scopus 로고
    • Polarity Dependent Gate Tunneling Currents in Dual-Gate CMoSFET's
    • November
    • Y. Shi, T. P. Ma, S. Prasad, and S. Dhanda, "Polarity Dependent Gate Tunneling Currents in Dual-Gate CMoSFET's," IEEE Trans. on Electron Devices, vol. 45, pp. 2355-2360, November 1998.
    • (1998) IEEE Trans. on Electron Devices , vol.45 , pp. 2355-2360
    • Shi, Y.1    Ma, T.P.2    Prasad, S.3    Dhanda, S.4
  • 18
    • 0345225496 scopus 로고    scopus 로고
    • A Comparative Study of the oxide Breakdown in Short-Channel nMoSFETs and pMoSFETs Stressed in Inversion and in Accumulation Regimes
    • March
    • F. Crupi, B. Kaczer, R. Degraeve, A. De Keersgieter, and G. Groeseneken, "A Comparative Study of the oxide Breakdown in Short-Channel nMoSFETs and pMoSFETs Stressed in Inversion and in Accumulation Regimes," IEEE Trans. on Device and Materials Reliability, vol. 3, pp. 8-13, March 2003.
    • (2003) IEEE Trans. on Device and Materials Reliability , vol.3 , pp. 8-13
    • Crupi, F.1    Kaczer, B.2    Degraeve, R.3    De Keersgieter, A.4    Groeseneken, G.5


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.