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Journal of Materials Science: Materials in Electronics

Volumn 20, Issue SUPPL. 1, 2009, Pages

Optical properties of undoped and oxygen doped CuCl films on silicon substrates

(9) Danieluk, Dominik a Bradley, Ann L a Mitra, Anirban a O'Reilly, Lisa b Lucas, Olibanji F b Cowley, Aidan b McNally, Patrick J b Foy, Barry b McGlynn, Enda b

a TRINITY COLLEGE DUBLIN (Ireland)

b DUBLIN CITY UNIVERSITY (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

CUCL FILMS; DEVICE PERFORMANCE; EXCITON LUMINESCENCE; HIGH DENSITY; INTERMEDIATE STATE; MISFIT DISLOCATIONS; NITRIDE LAYERS; NOVEL MATERIAL SYSTEM; OPTICAL QUALITIES; OXYGEN DOPING; OXYGEN-DOPED; SILICON SUBSTRATES; TEMPERATURE DEPENDENT PHOTOLUMINESCENCES; THERMAL QUENCHING;

COPPER COMPOUNDS; DOPING (ADDITIVES); NITRIDES; OXYGEN; PHOTOLUMINESCENCE SPECTROSCOPY; QUENCHING; SUBSTRATES;

OPTICAL PROPERTIES;

EID: 70450129743 PISSN: 09574522 EISSN: 1573482X Source Type: Journal
DOI: 10.1007/s10854-007-9448-5 Document Type: Conference Paper

Times cited : (12)

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