-
1
-
-
9744265677
-
Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r-plane sapphire
-
Nuri W. Emanetoglu, Jun Zhu, Ying Chen, Jian Zhong, Yimin Chen, and Yicheng Lu, "Surface acoustic wave ultraviolet photodetectors using epitaxial ZnO multilayers grown on r-plane sapphire, " Appl. Phys. Lett. 85, 3702-3704 (2004).
-
(2004)
Appl. Phys. Lett
, vol.85
, pp. 3702-3704
-
-
Emanetoglu, N.W.1
Zhu, J.2
Chen, Y.3
Zhong, J.4
Chen, Y.5
Lu, Y.6
-
2
-
-
0035333303
-
ZnO schottky ultraviolet photodetectors
-
S. Liang, H. Sheng, Y. Liu, Z. Huo, Y. Lu, and H. Shen, "ZnO Schottky ultraviolet photodetectors, " Journal of Crystal Growth 225, 110-113 (2001).
-
(2001)
Journal of Crystal Growth
, vol.225
, pp. 110-113
-
-
Liang, S.1
Sheng, H.2
Liu, Y.3
Huo, Z.4
Lu, Y.5
Shen, H.6
-
3
-
-
33749999507
-
Ultraviolet photodetectors with ZnO nanowires prepared on ZnO: Ga/glass templates
-
Chien-Yuan Lu, Shoou-Jinn Chang, Sheng-Po Chang, Ching-Ting Lee, Che-Fu Kuo, and Hong-Ming Chang, "Ultraviolet photodetectors with ZnO nanowires prepared on ZnO: Ga/glass Templates, " Appl. Phys. Lett. 89, 153101 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.89
, pp. 153101
-
-
Lu, C.-Y.1
Chang, S.-J.2
Chang, S.-P.3
Lee, C.-T.4
Kuo, C.-F.5
Chang, H.-M.6
-
4
-
-
52349096146
-
ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV
-
C. Yang, X. M. Li, Y. F. Gu, W. D. Yu, X. D. Gao, and Y. W. Zhang, "ZnO based oxide system with continuous bandgap modulation from 3.7 to 4.9 eV, " Appl. Phys. Lett. 93, 112114 (2008).
-
(2008)
Appl. Phys. Lett.
, vol.93
, pp. 112114
-
-
Yang, C.1
Li, X.M.2
Gu, Y.F.3
Yu, W.D.4
Gao, X.D.5
Zhang, Y.W.6
-
5
-
-
18444399372
-
Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented si substrate toward UV-detector applications
-
Kazuto Koike, Kenji Hama, Ippei Nakashima, Gen-you Takada, Ken-ichi Ogata, Shigehiko Sasa, Masataka Inoue, and Mitsuaki Yano, "Molecular beam epitaxial growth of wide bandgap ZnMgO alloy films on (111)-oriented Si substrate toward UV-detector applications, " Journal of Crystal Growth 278, 288-292 (2005).
-
(2005)
Journal of Crystal Growth
, vol.278
, pp. 288-292
-
-
Koike, K.1
Hama, K.2
Nakashima, I.3
Takada, G.-Y.4
Ogata, K.-I.5
Sasa, S.6
Inoue, M.7
Yano, M.8
-
6
-
-
0001447933
-
Band-gap tailoring of ZnO by means of heavy al doping
-
B. E. Sernelius, K. -F. Berggren, Z. -C. Jin, I. Hamberg, and C. G. Granqvist, "Band-gap tailoring of ZnO by means of heavy Al doping, " Phys. Rev. B 37, 10244-10248 (1988).
-
(1988)
Phys. Rev. B
, vol.37
, pp. 10244-10248
-
-
Sernelius, B.E.1
Berggren, K.-F.2
Jin, Z.-C.3
Hamberg, I.4
Granqvist, C.G.5
-
7
-
-
31544447505
-
Ultraviolet band-pass schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN
-
J. K. Sheu, M. L. Lee, C. J. Tun and S. W. Lin, "Ultraviolet band-pass Schottky barrier photodetectors formed by Al-doped ZnO contacts to n-GaN, " Appl. Phys. Lett. 88, 043506 (2006).
-
(2006)
Appl. Phys. Lett.
, vol.88
, pp. 043506
-
-
Sheu, J.K.1
Lee, M.L.2
Tun, C.J.3
Lin, S.W.4
-
8
-
-
0035335158
-
Structural, electrical, and optical properties of transparent conductive oxide ZnO: Al films prepared by dc magnetron reactive sputtering
-
M. Chen, Z. L. Pei, X. Wang, C. Sun and L. S. Wen, "Structural, electrical, and optical properties of transparent conductive oxide ZnO: Al films prepared by dc magnetron reactive sputtering, " J. Vac. Sci. Technol. A 19(3), 963-970 (2001).
-
(2001)
J. Vac. Sci. Technol. A
, vol.19
, Issue.3
, pp. 963-970
-
-
Chen, M.1
Pei, Z.L.2
Wang, X.3
Sun, C.4
Wen, L.S.5
-
9
-
-
45849120575
-
Al-doped zinc oxide films grown by successive chemical solution deposition
-
A.E. Rakhshani, "Al-doped zinc oxide films grown by successive chemical solution deposition, " Appl. Phys. A 92, 413-416 (2008).
-
(2008)
Appl. Phys. A
, vol.92
, pp. 413-416
-
-
Rakhshani, A.E.1
-
10
-
-
0001524926
-
Parameterization of the optical functions of amorphous materials in the interband region
-
G. E. Jellison Jr. and F. A. Modine, "Parameterization of the optical functions of amorphous materials in the interband region, "Appl. Phys. Lett. 69, 371-373 (1996).
-
(1996)
Appl. Phys. Lett.
, vol.69
, pp. 371-373
-
-
Jellison Jr., G.E.1
Modine, F.A.2
-
11
-
-
0344928514
-
12 thin films on si(100) substrates
-
12 thin films on Si(100) substrates, " Appl. Phys. Lett. 83, 3686-3688 (2003).
-
(2003)
Appl. Phys. Lett.
, vol.83
, pp. 3686-3688
-
-
Hu, Z.G.1
Ma, J.H.2
Huang, Z.M.3
Wu, Y.N.4
Wang, G.S.5
Chu, J.H.6
-
12
-
-
15744378345
-
Effects of carrier concentration on the dielectric function of ZnO: Ga and In2O3: Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption
-
Hiroyuki Fujiwara and Michio Kondo, "Effects of carrier concentration on the dielectric function of ZnO: Ga and In2O3: Sn studied by spectroscopic ellipsometry: Analysis of free-carrier and band-edge absorption, " Phys. Rev. B 71, 075109 (2005).
-
(2005)
Phys. Rev. B
, vol.71
, pp. 075109
-
-
Fujiwara, H.1
Kondo, M.2
-
14
-
-
0345169985
-
Structure-dependent electronic properties of nanocrystalline cerium oxide films
-
P. Patsalas, S. Logothetidis, L. Sygellou and S. Kennou, "Structure-dependent electronic properties of nanocrystalline cerium oxide films, " Phys. Rev. B 68, 035104 (2003).
-
(2003)
Phys. Rev. B
, vol.68
, pp. 035104
-
-
Patsalas, P.1
Logothetidis, S.2
Sygellou, L.3
Kennou, S.4
-
15
-
-
54249104977
-
Properties of zinc oxide films cosputtered with aluminum at room temperature
-
Day-Shan Liu, Fu-Chun Tsai, Ching-Ting Lee, and Cheng-Wei Sheu, "Properties of Zinc Oxide Films Cosputtered with Aluminum at Room Temperature, " J.J. Appl. Phys. 47, 3056-3062 (2008).
-
(2008)
J.J. Appl. Phys.
, vol.47
, pp. 3056-3062
-
-
Liu, D.-S.1
Tsai, F.-C.2
Lee, C.-T.3
Sheu, C.-W.4
-
16
-
-
36549094294
-
Optical properties of sputter-deposited ZnO: Al thin films
-
Z.-C. Jin, I. Hamberg, and C. G. Granqvist, "Optical properties of sputter-deposited ZnO: Al thin films, " J. Appl. Phys. 64, 5117-5131 (1988).
-
(1988)
J. Appl. Phys.
, vol.64
, pp. 5117-5131
-
-
Jin, Z.-C.1
Hamberg, I.2
Granqvist, C.G.3
-
17
-
-
0001447933
-
Band-gap tailoring of ZnO by means of heavy Al doping
-
B. E. Sernelius, K.-F. Berggren, Z.-C. Jin, I. Hamberg, and C. G. Granqvist, "Band-gap tailoring of ZnO by means of heavy Al doping, " Phys. Rev. B 37, 10244-10248 (1988).
-
(1988)
Phys. Rev. B
, vol.37
, pp. 10244-10248
-
-
Sernelius, B.E.1
Berggren, K.-F.2
Jin, Z.-C.3
Hamberg, I.4
Granqvist, C.G.5
|