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Volumn 2, Issue 6, 2008, Pages 281-283
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Unusual role of the substrate in droplet-induced gaas/algaas quantum-dot pairs
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Author keywords
[No Author keywords available]
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Indexed keywords
ALGAAS MATERIALS;
ARSENIC FLUXES;
CROSS SECTIONAL TRANSMISSION ELECTRON MICROSCOPY;
DROPLET EPITAXY;
GAAS;
GAAS/ALGAAS;
HIGH TEMPERATURE;
MELT-BACK;
PREFERENTIAL CRYSTALLIZATION;
QUANTUM DOTS;
STRUCTURAL COMPLEXITY;
SUBSTRATE PLANES;
UNDERLYING MECHANISM;
ARSENIC;
CRYSTAL GROWTH;
CRYSTALLIZATION;
DROP FORMATION;
SEMICONDUCTING GALLIUM;
SEMICONDUCTOR QUANTUM DOTS;
SUBSTRATES;
TRANSMISSION ELECTRON MICROSCOPY;
GALLIUM ALLOYS;
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EID: 70449631672
PISSN: 18626254
EISSN: 18626270
Source Type: Journal
DOI: 10.1002/pssr.200802196 Document Type: Article |
Times cited : (8)
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References (19)
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