Effect of U on the electronic properties of neodymium Gállate (NdGaO3): Theoretical and experimental studies

Journal of Physical Chemistry B

Volumn 113, Issue 46, 2009, Pages 15237-15242

  Reshak, Ali Hussain ^a   Piasecki, M ^b   Auluck, S ^c   Kityk, I V ^d   Khenata, R ^e   Andriyevsky, B ^f   Cobet, C ^g   Esser, N ^g   Majchrowski, A ^h   Swirkowicz M ⁱ   Diduszko, R ⁱ   Szyrski, W ⁱ  

^a UNIVERSITY OF SOUTH BOHEMIA   (Czech Republic)

^b JAN DLUGOSZ UNIVERSITY   (Poland)

^c INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^d CZESTOCHOWA UNIVERSITY OF TECHNOLOGY   (Poland)

^e UNIVERSITÉ DE MASCARA   (Algeria)

^f KOSZALIN UNIVERSITY OF TECHNOLOGY   (Poland)

^g ISAS INSTITUTE FOR ANALYTICAL SCIENCES   (Germany)

^h MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

ⁱ Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTION BANDS; DISPERSION (WAVES); ELECTRON MOBILITY; ELECTRONIC PROPERTIES; ENERGY GAP; GALLIUM; OPTICAL PROPERTIES; VALENCE BANDS;

A-DENSITY; BAND DISPERSIONS; BRILLOUIN ZONES; CENTROSYMMETRIC; CONDUCTION-BAND MINIMUM; ENERGY BANDGAPS; EXCHANGE CORRELATIONS; EXPERIMENTAL STUDIES; FREQUENCY DEPENDENT; FULL-POTENTIAL LINEAR AUGMENTED PLANE WAVES; PARTIAL DENSITY OF STATE; SPECTRAL RANGE; SYNCHROTRON SOURCE; UNIAXIAL ANISOTROPY; VALENCE-BAND MAXIMUMS;

NEODYMIUM;

EID: 70449587050     PISSN: 15206106     EISSN: None     Source Type: Journal    
DOI: 10.1021/jp908025p     Document Type: Article

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