The photoemission study of NdNiO 3 /NdGaO 3 thin films, through the metal-insulator transition

Applied Surface Science

Volumn 255, Issue 8, 2009, Pages 4355-4361

  Galicka, K ^a   Szade, J ^b   Ruello, P ^c   Laffez, P ^c   Ratuszna, A ^b  

^a UNIVERSITÉ PARIS SACLAY   (France)

^b UNIVERSITY OF SILESIA   (Poland)

^c UNIVERSITÉ DU MAINE   (France)

Author keywords

Metal insulator transition; NdNiO 3 NdGaO 3 thin films; Photoemission

Indexed keywords

CALCULATIONS; ELECTRONIC STRUCTURE; METAL INSULATOR BOUNDARIES; NEODYMIUM COMPOUNDS; NICKEL COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; PHOTOEMISSION; SEMICONDUCTOR INSULATOR BOUNDARIES; TEMPERATURE DISTRIBUTION; THIN FILMS;

AB INITIO CALCULATIONS; DC ELECTRICAL RESISTIVITIES; METAL INSULATORS; NEW RESULTS; PHOTOEMISSION SPECTRA; TEMPERATURE DEPENDENCE; THICKNESS DEPENDENCE;

METAL INSULATOR TRANSITION;

EID: 58349087892     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2008.03.057     Document Type: Article

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