A CMOS-compatible, low-noise ISFET based on high efficiency ion-modulated lateral-bipolar conduction

Sensors

Volumn 9, Issue 10, 2009, Pages 8336-8348

  Chang, Sheng Ren ^a   Chen, Hsin ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

CMOS compatible; ISFET; Lateral bipolar conduction; Low noise

Indexed keywords

BIASING CONDITIONS; CMOS COMPATIBLE; LAYOUT DESIGNS; LOW NOISE; LOW-FREQUENCY NOISE; LOW-NOISE APPLICATIONS; NOISE PERFORMANCE; STANDARD CMOS TECHNOLOGY;

CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; ION SENSITIVE FIELD EFFECT TRANSISTORS; SIGNAL TO NOISE RATIO;

IONS;

EID: 70449576048     PISSN: 14248220     EISSN: None     Source Type: Journal    
DOI: 10.3390/s91008336     Document Type: Article

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