ISFET performance enhancement by using the improved circuit techniques

Sensors and Actuators, B: Chemical

Volumn 113, Issue 1, 2006, Pages 555-562

  Chung, Wen Yaw ^a   Yang, Chung Huang ^a,b   Pijanowska, Dorota G ^c,e   Grabiec, Piotr B ^d,f,g,h   Torbicz, Wladyslaw ^c,e  

^a CHUNG YUAN CHRISTIAN UNIVERSITY   (Taiwan)

^b VAN NUNG INSTITUTE OF TECHNOLOGY   (Taiwan)

^c INSTITUTE OF BIOCYBERNETICS AND BIOMEDICAL ENGINEERING   (Poland)

^d ukasiewicz Research Network Institute of Microelectronics and Photonics   (Poland)

^e Polish Society of the Sensor Technology   (Poland)

^f Silicon Microsystem and Nanostructure Department

^g IEEE

^h ELECTROCHEMICAL SOCIETY

Author keywords

Body effect reduction; CMOS; ISFET; Long term drift; Temperature dependency

Indexed keywords

BODY-EFFECT REDUCTION; CMOS; LONG-TERM DRIFT; TEMPERATURE-DEPENDENCY;

CMOS INTEGRATED CIRCUITS; COMPUTER SIMULATION; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; NETWORKS (CIRCUITS); PH EFFECTS;

ION SENSITIVE FIELD EFFECT TRANSISTORS;

EID: 29244445469     PISSN: 09254005     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.snb.2005.06.018     Document Type: Article

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