Structural and magnetotransport properties of La0.67Sr0.33MnOz thin films prepared by metal-organic decomposition under different annealing process

Journal of Alloys and Compounds

Volumn 488, Issue 1, 2009, Pages 437-441

  Zhu, Xiangrong ^a,b   Shen, Honglie ^c   Tang, Zhengxia ^c   Tsukamoto, Koichi ^d   Yanagisawa, Takeshi ^d   Okutomi, Mamoru ^d   Higuchi, Noboru ^d  

^a SHANGHAI SECOND POLYTECHNIC UNIVERSITY   (China)

^b SHANGHAI INSTITUTE OF MICROSYSTEM AND INFORMATION TECHNOLOGY   (China)

^c NANJING UNIVERSITY OF AERONAUTICS AND ASTRONAUTICS   (China)

^d NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

LSMO film; Magnetotransport; Metal organic decomposition; Structure

Indexed keywords

AMORPHOUS QUARTZ; ANNEALING PROCESS; ANNEALING TEMPERATURES; ANNEALING TIME; APPLIED FIELD; ATOMIC FORCE MICROSCOPES; CRYSTALLIZATION TEMPERATURE; GRAIN SIZE; LSMO FILM; MAGNETO TRANSPORT PROPERTIES; MAGNETOTRANSPORT; METAL INSULATOR TRANSITION TEMPERATURE; METAL-ORGANIC DECOMPOSITION; MR RATIO; POLYCRYSTALLINE FILM; POLYCRYSTALLINE STRUCTURE; PREFERRED ORIENTATIONS; ROOM TEMPERATURE; STRUCTURAL CHARACTERISTICS; STRUCTURE;

ANNEALING; DECOMPOSITION; ELECTRIC RESISTANCE; FILM PREPARATION; GRAIN GROWTH; LANTHANUM; MAGNETIC FIELD EFFECTS; MAGNETORESISTANCE; MANGANESE COMPOUNDS; METAL ANALYSIS; METAL INSULATOR BOUNDARIES; METAL INSULATOR TRANSITION; METALS; OXIDE MINERALS; QUARTZ; SEMICONDUCTOR INSULATOR BOUNDARIES; THIN FILMS;

AMORPHOUS FILMS;

EID: 70449530513     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2009.08.151     Document Type: Article

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