Chemical vapor deposition and structural study of La0.8MnO3-δ thin films

Thin Solid Films

Volumn 347, Issue 1-2, 1999, Pages 161-166

  Pignard, S ^a   Vincent, H ^a   Senateur J P ^a   Giauque, P H ^b  

^a LABORATOIRE DES MATÉRIAUX ET DU GÉNIE PHYSIQUE   (France)

^b California Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL LATTICES; CRYSTAL STRUCTURE; FILM GROWTH; LANTHANUM COMPOUNDS; MAGNESIA; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SCANNING ELECTRON MICROSCOPY; SINGLE CRYSTALS; SUBSTRATES; SYNTHESIS (CHEMICAL); TEMPERATURE; X RAY DIFFRACTION ANALYSIS;

CRYSTALLINITY; GROWTH RATE; LACUNAR LANTHANUM MANGANITES; LATTICE MISMATCH; MOLAR RATIO; MOSAICITY; SUBSTRATE TEMPERATURE;

THIN FILMS;

EID: 0344972660     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)01746-5     Document Type: Article

References (21)

1. Chahara K., Ohno T., Kasai M., Kosono K. Appl. Phys. Lett. 63:(14):1993;1990.
2. Li K., Qi Z., Li X., Zhu J., Zhang Y. Thin Solid Films. 304:1997;386.
3. Urushibara A., Morimoto Y., Arima T., Asamitsu A., Kido G., Tokura Y. Phys. Rev. B. 51:(20):1995;14103.
4. Zhang W., Boyd I.W., Cohen N.S., Bui Q.T., Pankhaurst Q.A. Appl. Surf. Sci. 109:1997;350.
5. Lofland S.E., Dominguez M., Tyagi S.D., Bhagat S.M., Robson M.C., Kwon C., Trajanovic Z., Takeuchi I., Ramesh R., Venkatesan T. Thin Solid Films. 288:1996;256.
6. von Helmolt R., Wecker J., Holzapfel B., Schultz L., Samwer K. Phys. Rev. Lett. 71:(14):1993;2331.
7. Manoharan S.S., Vasanthacharya N.Y., Hedge M.S., Satyalakshmi K.M., Prasad V., Subramanyam S.V. J. Appl. Phys. 76:(6):1994;3923.
8. Liu J.Z., Chang I.C., Irons S., Klavins P., Shelton R.N., Song K., Wasserman S.R. Appl. Phys. Lett. 66:(23):1995;3218.
9. Manoharan S.S., Hedge M.S., Satyalakshmi K.M., Prasad V., Subramanyam S.V. Thin Solid Films. 275:1996;244.
10. White R.L. IEEE Trans. Magn. 30:(2):1994;346.
11. Lenz J.E. Proc. IEEE. 78:1990;973.
12. Tokura Y., Tomioka Y., Kuwahara H., Asamitsu A., Morimoto Y., Kasai M. Physica C. 263:1996;544.
13. Pignard S., Vincent H., Sénateur J.P., Pierre J., Abrutis A. J. Appl. Phys. 82:(9):1997;4445.
14. Yu Gorbenko O., Decker W., Wahl G. J. Physique. C3:(3):1993;25.
15. J.P. Sénateur, F. Weiss, O. Thomas, R. Madar, A. Abrutis, French Patent No. 93/08838 PCT No. FR9400858.
16. Presenting a Raman-X-ray comparative study on magnetic oxide films, Appl. Phys. Lett. 73(9) (1998) 1194.
17. Gu J.Y., Kim K.H., Noh T.W., Suh K.S. J. Appl. Phys. 78:(10):1995;6151.
18. Li Y.Q., Zhang J., Pombrik S., DiMascio S., Stevens W., Fan Y.F., Ong N.P. J. Mater. Res. 10:(9):1995;2166.
19. Kitagawa M., Yamazaki Y. J. Mag. Soc. Japan. 20:(5):1996;1.
20. Dahmen K.H., Carris M.W. Chem. Vap. Dep. 3:(1):1997;27.
21. Shi L., Gao J., Zhou G., Zhang Y. J. Phys.: Condens. Matter. 9:1997;7855.