Photoelectrochemical properties of nitrogen-doped indium tin oxide thin films prepared by reactive DC magnetron sputtering

Thin Solid Films

Volumn 518, Issue 5, 2009, Pages 1581-1584

  Wu, Kee Rong ^a   Yeh, Chung Wei ^b   Hung, Chung Hsuang ^a   Cheng, Li Hsun ^a   Chung, Chih Yuan ^a  

^a NATIONAL KAOHSIUNG UNIVERSITY OF APPLIED SCIENCES   (Taiwan)

^b KAO YUAN UNIVERSITY   (Taiwan)

Author keywords

Nitrogen doped tin indium oxide; Photocurrent; Visible light; Water splitting

Indexed keywords

APPLIED BIAS; BAND GAPS; ELECTRON TRANSFER; GLASS SUBSTRATES; INDIUM NITRIDE; INDIUM TIN OXIDE; INDIUM TIN OXIDE THIN FILMS; ITO FILMS; ITO THIN FILMS; N-DOPED; N-DOPING; NITROGEN-DOPED; NITROGEN-DOPED TIN INDIUM OXIDE; PHOTOCURRENT DENSITY; PHOTOCURRENT RESPONSE; PHOTOELECTROCHEMICAL PROPERTIES; PHOTOELECTROCHEMICALS; RAMAN PEAK; REACTIVE DC MAGNETRON SPUTTERING; VISIBLE LIGHT; WATER SPLITTING; XRD PEAKS;

DOPING (ADDITIVES); ELECTRON MOBILITY; INDIUM; LIGHT; NITRIDES; NITROGEN; OXIDE FILMS; PHOTOCURRENTS; PHOTOLITHOGRAPHY; THIN FILMS; TIN; X RAY DIFFRACTION; X RAY DIFFRACTION ANALYSIS;

FILM PREPARATION;

EID: 70449477073     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2009.09.056     Document Type: Article

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