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Volumn 52, Issue 6, 2009, Pages 317-321

Dark current analysis of InAs/GaSb superlattices at low temperatures

Author keywords

Dark current; Infrared detector; Superlattices

Indexed keywords

COMPARING DEVICES; DOMINANT MECHANISM; INAS/GASB; INAS/GASB SUPERLATTICES; INFRARED DETECTION; LOW TEMPERATURES; STRAINED-LAYER SUPERLATTICE; TYPE-II SUPERLATTICES;

EID: 70449373680     PISSN: 13504495     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.infrared.2009.05.022     Document Type: Article
Times cited : (58)

References (13)
  • 3
    • 33644941037 scopus 로고    scopus 로고
    • InAs/GaInSb superlattices as a promising material system for third generation infrared detectors
    • Rogalski A., and Martyniuk P. InAs/GaInSb superlattices as a promising material system for third generation infrared detectors. Infrared Phys. Tech. 48 (2006) 39-52
    • (2006) Infrared Phys. Tech. , vol.48 , pp. 39-52
    • Rogalski, A.1    Martyniuk, P.2
  • 4
    • 0004294896 scopus 로고    scopus 로고
    • Gordon and Breach Science Publishers, Netherlands
    • Rogalski A. Infrared Detectors (2000), Gordon and Breach Science Publishers, Netherlands
    • (2000) Infrared Detectors
    • Rogalski, A.1
  • 5
    • 58149265394 scopus 로고    scopus 로고
    • Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes
    • Gopal V., Plis E., Rodriguez J.-B., Jones C.E., Faraone L., and Krishna S. Modeling of electrical characteristics of midwave type II InAs/GaSb strain layer superlattice diodes. J. Appl. Phys. 104 (2008) 124506
    • (2008) J. Appl. Phys. , vol.104 , pp. 124506
    • Gopal, V.1    Plis, E.2    Rodriguez, J.-B.3    Jones, C.E.4    Faraone, L.5    Krishna, S.6
  • 6
    • 0037449282 scopus 로고    scopus 로고
    • Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes
    • Yang Q.K., Fuchs F., Schmitz J., and Pletschen W. Investigation of trap-assisted tunneling current in InAs/(GaIn)Sb superlattice long-wavelength photodiodes. Appl. Phys. Lett. 81 (2002) 4757
    • (2002) Appl. Phys. Lett. , vol.81 , pp. 4757
    • Yang, Q.K.1    Fuchs, F.2    Schmitz, J.3    Pletschen, W.4
  • 7
    • 0033731750 scopus 로고    scopus 로고
    • Growth and characterization of type-II non-equilibrium photovoltaic detectors for long wavelength infrared range
    • Mohseni H., Wojkowski J.S., Tahraoui A., and Razeghi M. Growth and characterization of type-II non-equilibrium photovoltaic detectors for long wavelength infrared range. Proc. SPIE 3948 (2000) 153-160
    • (2000) Proc. SPIE , vol.3948 , pp. 153-160
    • Mohseni, H.1    Wojkowski, J.S.2    Tahraoui, A.3    Razeghi, M.4
  • 8
    • 70649114675 scopus 로고    scopus 로고
    • Characterization of LWIR diodes on InAs/GaSb type-II superlattice material
    • Rhiger D.R., Kvaas R.E., Harris S.F., and Hill C.J. Characterization of LWIR diodes on InAs/GaSb type-II superlattice material. Infrared Phys. Technol. 52 (2009) 304
    • (2009) Infrared Phys. Technol. , vol.52 , pp. 304
    • Rhiger, D.R.1    Kvaas, R.E.2    Harris, S.F.3    Hill, C.J.4
  • 9
    • 0347842488 scopus 로고    scopus 로고
    • Forward current-voltage characteristics of HgCdTe on p-on-n photodiodes
    • Xiangyang L., Jun Z., Hiuqing L., Jiaxion F., and Yueyan X. Forward current-voltage characteristics of HgCdTe on p-on-n photodiodes. Proc. SPIE 3379 (1998) 601
    • (1998) Proc. SPIE , vol.3379 , pp. 601
    • Xiangyang, L.1    Jun, Z.2    Hiuqing, L.3    Jiaxion, F.4    Yueyan, X.5
  • 10
    • 84927553170 scopus 로고
    • Carrier generation and recombination in P-N junction and P-N junction characteristics
    • Sah C.-T., Noyce R.N., and Shockley W. Carrier generation and recombination in P-N junction and P-N junction characteristics. Proc. IRE 45 (1957) 1228
    • (1957) Proc. IRE , vol.45 , pp. 1228
    • Sah, C.-T.1    Noyce, R.N.2    Shockley, W.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.