Growth of well-aligned Bi nanowire on Ag(1 1 1)

Applied Surface Science

Volumn 256, Issue 2, 2009, Pages 460-464

  Zhang, Hong Liang ^a   Chen, Wei ^a   Wang, Xue Sen ^a   Yuhara, Junji ^b   Wee, Andrew Thye Shen ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b NAGOYA UNIVERSITY   (Japan)

Author keywords

Bismuth; Nanowire; Scanning tunneling microscopy

Indexed keywords

BISMUTH; DANGLING BONDS; PHYSICAL VAPOR DEPOSITION; SCANNING TUNNELING MICROSCOPY; TEMPERATURE;

AG(1 1 1); BI NANOWIRES; BILAYER GROWTH; CRYSTALLOGRAPHIC STRUCTURE; LOW-TEMPERATURE SCANNING TUNNELING MICROSCOPY; PREFERRED GROWTH; TOTAL ENERGY; ULTRA-HIGH;

NANOWIRES;

EID: 70449130634     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2009.07.016     Document Type: Article

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