A statistical model of Erratic Erase based on an automated Random Telegraph Signal characterization technique

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 896-901

  Chimenton, A ^a   Zambelli, C ^a   Olivo, P ^a  

^a UNIVERSITY OF FERRARA   (Italy)

Author keywords

Electrical characterization; Flash memory; Non volatile memory; Random telegraph signal; Reliability

Indexed keywords

ANALYSIS TECHNIQUES; BIT LINES; ELECTRICAL CHARACTERIZATION; EXPERIMENTAL ANALYSIS; MEMORY DESIGN; NON-VOLATILE MEMORY; RANDOM TELEGRAPH SIGNAL; RANDOM TELEGRAPH SIGNALS; STATISTICAL MODELS; STATISTICAL SIMULATION; THRESHOLD VOLTAGE DISTRIBUTION;

RELIABILITY; SIMULATORS; TELEGRAPH; THRESHOLD VOLTAGE;

FLASH MEMORY;

EID: 70449091730     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173375     Document Type: Conference Paper

References (7)

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3. A. Chimenton, P. Pellati, P. Olivo, and A. Modelli "Generation Rate of erratic bits in Flash memories", Non Volatile Semiconductor Memory Workshop, Monterey (CA), pp. 123-124, August 12-15, 2001.
4. A. Chimenton, P.Pellati and P. Olivo, "Overerase phenomena: an insight into flash memory reliability", Proceedings of the IEEE, Vol. 91, N.4, pp. 617-626, April 2003.
5. A. Chimenton and P. Olivo, "Erratic erase in flash memories. I. Basic experimental and statistical characterization", IEEE Trans. On Electron Devices, Vol. 50, N.4, pp.1009-1014, Apr. 2003.
6. A. Chimenton, P. Olivo, "Reliability of erasing operation in NOR-Flash memories", Introductory Invited Paper in Microelectronics Reliability, Vol. 45, Issues 7-8, pp.1094-1108, Jul.-Aug. 2005.
7. C. Dunn, et. al, "Flash EPROM disturb mechanisms", International Reliability Physics Sumposium, pp.299-308, 1994.