An efficient approach to quantify the impact of Cu residue on ELK TDDB

IEEE International Reliability Physics Symposium Proceedings

Volumn , Issue , 2009, Pages 619-623

  Chang, M N ^a   Wang, Robin C J ^a   Chiu, C C ^a   Wu, Kenneth ^a  

^a TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

Author keywords

IMD TDDB; TOFSIMS; TVS

Indexed keywords

A-THERMAL; CU IONS; IMD TDDB; INTER-METAL DIELECTRICS; ORDERS OF MAGNITUDE; POROUS LOW-K; TDDB LIFETIME; TIME OF FLIGHT SECONDARY ION MASS SPECTROMETRY; TOFSIMS; TVS; VOLTAGE SWEEP;

HEAT TREATMENT; HEAVY IONS; INTERMODULATION DISTORTION; SECONDARY ION MASS SPECTROMETRY;

COPPER;

EID: 70449084637     PISSN: 15417026     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IRPS.2009.5173320     Document Type: Conference Paper

References (5)

1. F. Chen, P. McLaughlin, et al., "The Effect of Metal Area and Line Spacing on TDDB Characteristics of 45nm Low-k SiCOH Dielectrics" , IRPS, 2007, pp. 382-389
2. Gaddi S. Haase and Joe W. McPherson, "Modeling of Interconnect Dielectric Lifetime Under Stress Conditions and New Extrapolation Methodologies for Time Dependent Dielectric Breakdown" IRPS 2007, pp. 390-398
3. A. MALLIKARJUNAN, S.P.MURARKA, "Mobile Ion Detection in Organosiloxane Polymer Using Triangular Voltage Sweep", Journal of The Electrochemical Society, 2002, pp 155-159
4. Junji Noguchi, et al., "Cu-Ion-Migration Phenomena and its Influence on TDDB Lifetime in Cu Metallization," IRPS 2003, pp. 287-292
5. Ennis T. Ogawa, Jinyoung Kim, Gad S. Haase, Homi C. Mogul, and Joe W. McPherson, "Leakage, Breakdown, and TDDB Characteristics of Porous Low-k Silica-Based Interconnect Dielectrics," IRPS 2003, pp. 166-172