Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

Journal of Applied Physics

Volumn 96, Issue 7, 2004, Pages 3742-3747

  Williams, Oliver A ^a   Jackman, Richard B ^a  

^a UNIVERSITY COLLEGE LONDON   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; CONDUCTIVE MATERIALS; GROWTH (MATERIALS); POLYCRYSTALLINE MATERIALS; SCANNING TUNNELING MICROSCOPY; SINGLE CRYSTALS;

CARRIER TRANSPORT PROPERTIES; HOMOEPITAXIAL GROWTH; PLASMA DEPOSITION SYSTEM; SURFACE CONDUCTIVE LAYER;

DIAMONDS;

EID: 7044262184     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1789275     Document Type: Article

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