Visible red light emission from Eu-doped GaN quantum dots grown by plasma-assisted MBE

Physica Status Solidi C: Conferences

Volumn , Issue 7, 2003, Pages 2695-2698

  Hori, Y ^a,c   Enjalbert, F ^b   Jalabert, D ^c   Monroy, E ^c   Dang, Le Si ^b   Biquard, X ^c   Tanaka, M ^a   Oda, O ^a   Daudin, B ^c  

^a NGK INSULATORS LTD   (Japan)

^b UNIV GRENOBLE ALPES   (France)

^c CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EU-DOPED GAN; GAN QUANTUM DOTS; GROWTH OF GAN; INTENSE EMISSION; MAXIMUM EMISSIONS; PLASMA-ASSISTED MBE; RED-LIGHT EMISSION; ROOM TEMPERATURE;

EUROPIUM; SEMICONDUCTOR QUANTUM DOTS;

GALLIUM NITRIDE;

EID: 7044261431     PISSN: 16101634     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1002/pssc.200303483     Document Type: Conference Paper

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