Exciton fine structure splitting of single InGaAs self-assembled quantum dots

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 21, Issue 2-4, 2004, Pages 175-179

  Hogele A ^a   Alen B ^a,b   Bickel, F ^a   Warburton, R J ^c   Petroff, P M ^d   Karrai, K ^a  

^a UNIVERSITY OF MUNICH   (Germany)

^b UNIVERSITY OF VALENCIA   (Spain)

^c HERIOT WATT UNIVERSITY   (United Kingdom)

^d University of California   (United States)

Author keywords

Absorption; Fine structure splitting; Homogeneous linewidth; Quantum dots

Indexed keywords

ABSORPTION SPECTROSCOPY; BAND STRUCTURE; CAVITY RESONATORS; EXCITONS; GROUND STATE; LASERS; LIGHT POLARIZATION; LIGHT TRANSMISSION; OPTICAL RESOLVING POWER; PHOTOLUMINESCENCE; PHOTONS; SELF ASSEMBLY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

FINE STRUCTURE SPLITTING; HOMOGENEOUS LINEWIDTHS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 7044256993     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2003.11.007     Document Type: Conference Paper

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