Carrier storage and capture dynamics in quantum-dot heterostructures

Applied Physics Letters

Volumn 82, Issue 21, 2003, Pages 3761-3763

  Smith, J M ^a   Dalgarno, P A ^a   Urbaszek, B ^a   McGhee, E J ^a   Buller, G S ^a   Nott, G J ^a   Warburton, R J ^a   Garcia, J M ^b   Schoenfeld, W ^c   Petroff, P M ^c  

^a HERIOT WATT UNIVERSITY   (United Kingdom)

^b INSTITUTO DE MICROELECTRÓNICA DE MADRID   (Spain)

^c University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRIC POTENTIAL; GATES (TRANSISTOR); INTERFACES (MATERIALS); NANOSTRUCTURED MATERIALS; PHOTOLUMINESCENCE; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

VALENCE BANDS;

HETEROJUNCTIONS;

EID: 0038305975     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1577830     Document Type: Article

References (20)

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12. Figure 8 of Ref. 9 shows a reduction in ionization energy with increased electric field, of a magnitude consistent with the results presented here. Extrapolation of the ionization energy to zero field reveals a barrier height close to the theoretical value of 200 meV.
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17. Capacitance-voltage data from this sample show that the electron s-level is fully occupied at biases above -0.5 V, so the electron dynamics are unlikely to require detailed consideration.
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