Effect of stress exerted by Si3N4 and SiO2 insulation layers on donors generation in surface layer of Czochralski grown silicon

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3725, Issue , 1999, Pages 218-221

  Jung, Wojciech ^a   Misiuk, Andrzej ^a   Bak Misiuk, Jadwiga ^a   Rozental, Marek ^a  

^a Department of Micro and Nanotechnology of Wide Bandgap Semiconductors   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; COMPRESSIVE STRESS; CRYSTAL GROWTH FROM MELT; FILM GROWTH; SILICA; SILICON NITRIDE;

INSULATION FILM; THERMODONOR;

SEMICONDUCTING SILICON;

EID: 0032652012     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (10)