Interface reaction between Ni and amorphous SiC

Journal of Electronic Materials

Volumn 33, Issue 10, 2004, Pages 1064-1070

  Kim, Sungtae ^a   Perepezko, J H ^a   Dong, Z ^a,b   Edelstein, A S ^c  

^a University of Wisconsin Madison   (United States)

^b UNIVERSITY OF ALBERTA   (Canada)

^c U S ARMY RESEARCH LABORATORY   (United States)

Author keywords

Amorphous; Interface reaction; Ni; Nucleation phase selection diagram; Sic

Indexed keywords

ENERGY DISPERSIVE SPECTROSCOPY; FREE ENERGY; MULTILAYERS; NUCLEATION; REACTION KINETICS; SILICON CARBIDE; SPUTTERING; THERMODYNAMICS; TRANSMISSION ELECTRON MICROSCOPY;

INTERFACE REACTION; ISOTHERMAL ANNEALING; PHASE-SELECTION DIAGRAM; SIC;

NICKEL;

EID: 7044239750     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0106-x     Document Type: Conference Paper

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