Growth of high quality GaN epilayer on AlInN/GaN/AlInN/GaN multilayer buffer and its device characteristics

Physica Status Solidi (A) Applied Research

Volumn 201, Issue 12, 2004, Pages 2795-2798

  Lee, Suk Hun ^a   Lee, Hyun Hwi ^a   Jung, Jong Jae ^a   Moon, Young Bu ^b   Kim, Tae Hoon ^c   Baek, Jong Hyeob ^c   Yu, Young Moon ^c  

^a LG Innotek Co Ltd   (South Korea)

^b LG Electronics Inc   (South Korea)

^c Korea Photonics Technology Institute (KOPTI)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM COMPOUNDS; ATOMIC FORCE MICROSCOPY; COMPOSITION; ELECTRODES; ELECTROLUMINESCENCE; ELECTROSTATICS; INDIUM COMPOUNDS; LIGHT EMITTING DIODES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; X RAY DIFFRACTION; APPROXIMATION THEORY; CRYSTALLIZATION; MULTILAYERS; PHOTOLUMINESCENCE; SEMICONDUCTOR LASERS; X RAY DIFFRACTION ANALYSIS;

BRAGG PEAK; EPILAYERS; HALL MOBILITY; MULTI-LAYER BUFFER (MLB); BUFFER LAYERS; CRYSTALLINE QUALITY; WAVELENGTH;

GALLIUM; GALLIUM NITRIDE;

EID: 7044229713     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200405104     Document Type: Conference Paper

References (6)

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