Ultrafast transient grating spectroscopy in silicon quantum dots

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 8, 2009, Pages 4575-4579

  Wen, Xiaoming ^a,b   Van Dao, Lap ^b   Hannaford, Peter ^b   Cho, Eun Chel ^c   Cho, Young H ^c   Green, Martin A ^c  

^a UNIVERSITY OF MELBOURNE   (Australia)

^b SWINBURNE UNIVERSITY OF TECHNOLOGY   (Australia)

^c UNIVERSITY OF NEW SOUTH WALES   (Australia)

Author keywords

Silicon quantum dots; Ultrafast spectroscopy

Indexed keywords

DECAY TIME; DETECTION WAVELENGTHS; ELECTRONS AND HOLES; EXCITED CARRIERS; FEMTOSECOND TRANSIENT; INDIRECT SEMICONDUCTOR; LOCALIZED STATE; PHOTOEXCITED ELECTRONS; SILICON QUANTUM DOTS; TIME-RESOLVED PHOTOLUMINESCENCE; TIME-SCALES; TRANSIENT GRATING SPECTROSCOPY; TRANSVERSE ACOUSTIC PHONONS; TRANSVERSE OPTICAL; ULTRA-FAST; ULTRAFAST CARRIER DYNAMICS; ULTRAFAST DECAY; ULTRAFAST SPECTROSCOPY;

OPTICAL WAVEGUIDES; SEMICONDUCTING SILICON COMPOUNDS; SILICON OXIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70350762145     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1084     Document Type: Article

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