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Journal of Applied Physics

Volumn 106, Issue 8, 2009, Pages

Trapping of Ce electrons in band gap and room temperature ferromagnetism of Ce4+ doped ZnO nanowires

(7) Iqbal, Javed a Liu, Xiaofang a Zhu, Huichao b Pan, Chongchao a Zhang, Yong c Yu, Dapeng b Yu, Ronghai a

a TSINGHUA UNIVERSITY (China)

b PEKING UNIVERSITY (China)

c Massachusetts Institute of Technology Cambridge (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE LENGTH; BAND GAPS; DOPED ZNO; GREEN EMISSION BANDS; IN-BAND; LOW TEMPERATURES; METAL-DOPED; OPTICAL CHARACTERISTICS; OXIDATION STATE; RED SHIFT; ROOM TEMPERATURE FERROMAGNETISM; SINGLE PHASE; SOFT CHEMICAL METHOD; SPINTRONIC DEVICE; UV REGION; WURTZITE STRUCTURE; X-RAY PHOTOELECTRON SPECTROSCOPY STUDIES; ZNO;

CERIUM; CERIUM COMPOUNDS; CHARGE TRANSFER; DOPING (ADDITIVES); ELECTRIC WIRE; ENERGY GAP; FERROMAGNETISM; ION EXCHANGE; NANOWIRES; SEMICONDUCTING ZINC COMPOUNDS; ZINC; ZINC OXIDE; ZINC SULFIDE;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 70350738165 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3245325 Document Type: Article

Times cited : (68)

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