Magnetization-controlled conductance in (Ga,Mn)As-based resonant tunneling devices

Applied Physics Letters

Volumn 95, Issue 17, 2009, Pages

  Tran, M ^a,b   Peiro, J ^a,b   Jaffrs H ^a,b   George, J M ^a,b   Mauguin, O ^a   Largeau, L ^a   Lematre A ^a  

^a CNRS   (France)

^b UNIVERSITÉ PARIS SACLAY   (France)

Author keywords

[No Author keywords available]

Indexed keywords

EXPERIMENTAL EVIDENCE; FERROMAGNETIC ELECTRODES; IN-PLANE; LARGE SHIFTS; MAGNETIC GATES; MAGNETIC LAYERS; MAGNETIZATION ORIENTATION; OUT-OF-PLANE DIRECTION; RESONANT TUNNELING DEVICE; RESONANT TUNNELING DIODES; TUNNELING ANISOTROPIC MAGNETORESISTANCES; TUNNELING CURRENT;

ELECTRIC RESISTANCE; ELECTRON TUBE DIODES; GALLIUM; MAGNETIC FIELD EFFECTS; MAGNETIZATION; MAGNETORESISTANCE; MANGANESE; MANGANESE COMPOUNDS; RESONANT TUNNELING; SEMICONDUCTOR DIODES; TUNNEL DIODES; WIND TUNNELS;

MAGNETS;

EID: 70350709987     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3250172     Document Type: Article

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