Pressure influence on the Stark effect of impurity states in a strained wurtzite GaN/AlxGa1-xN heterojunction

Chinese Physics B

Volumn 18, Issue 10, 2009, Pages 4449-4455

  Zhang, Min ^a,b   Ban, Shi Liang ^a  

^a INNER MONGOLIA UNIVERSITY   (China)

^b INNER MONGOLIA NORMAL UNIVERSITY   (China)

Author keywords

Binding energy of impurity state; GaN AlxGa1xN; Pressure; Stark effect; Strain

Indexed keywords

BIAXIAL STRAINS; BLUE SHIFT; COHERENT POTENTIAL APPROXIMATION; ELECTRON DENSITIES; EXTERNAL ELECTRIC FIELD; GAN/ALXGA1XN; IMPURITY STATE; NUMERICAL RESULTS; RED SHIFT; STARK ENERGIES; STARK SHIFT; UNI-AXIAL STRAINS; VARIATIONAL METHODS; WURTZITES;

ASTROPHYSICS; BINDING SITES; DOPPLER EFFECT; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; EPITAXIAL GROWTH; GALLIUM; HETEROJUNCTIONS; HYDROSTATIC PRESSURE; LATTICE MISMATCH; NUCLEAR ENERGY; POTENTIAL ENERGY; PRESSURE EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SPECTROSCOPY; STARK EFFECT; STRAIN; ZINC SULFIDE;

BINDING ENERGY;

EID: 70350458108     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/18/10/057     Document Type: Article

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