Luminescence properties of Sm3+-doped TiO2 thin films prepared by laser ablation

Journal of Physics D: Applied Physics

Volumn 42, Issue 8, 2009, Pages

  Jing, Fangli ^a   Harako, Susumu ^a   Komuro, Shuji ^b   Zhao, Xinwei ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANATASE TIO; DOPED-TIO; ELECTRON HOLE PAIRS; ENERGY TRANSFER PROCESS; FINE STRUCTURES; HOST CRYSTALS; INFRARED WAVELENGTHS; LUMINESCENCE PROPERTIES; PHOTOLUMINESCENCE EXCITATION SPECTROSCOPY; PL EMISSION; PL SPECTRA; ROOM TEMPERATURE; RUTILE TIO; SILICON SUBSTRATES; SINGLE-PHASE THIN FILMS; TIO; VISIBLE PHOTOLUMINESCENCE;

ENERGY TRANSFER; LASER ABLATION; LASER APPLICATIONS; LIGHT EMISSION; OXIDE MINERALS; PHOTOLUMINESCENCE; PULSED LASER DEPOSITION; SAMARIUM; THIN FILMS; TITANIUM DIOXIDE; TITANIUM OXIDES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 70350434158     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/8/085109     Document Type: Article

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