Photoluminescence and optical transition dynamics of Er3+ ions in porous Si

Journal of Materials Science and Technology

Volumn 15, Issue 4, 1999, Pages 357-362

  Zhao, Xinwei ^a   Isshiki, Hideo ^a   Aoyagi, Yoshinobu ^a   Sugano, Takuo ^a   Komuro, Shuji ^b  

^a INST OF PHYS AND CHEMICAL RESEARCH   (Japan)

^b TOYO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); PHOTOLUMINESCENCE; POROUS SILICON;

OPTICAL TRANSITION DYNAMICS;

ERBIUM;

EID: 0033157867     PISSN: 10050302     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (13)

1. G.S.Pomrenke, P.B.Klein and D.W.Langer: Mater. Res. Soc. Proc., Rare Earth Doped Semiconductors, Pittsburgh, 1993, 301, 1.
2. S.Coffa, F.Priolo, G.Franzo, V.Bellani, A.Carnera and C.Spinelle: Phys. Rev., 1994, 48, 11782.
3. P.N.Favennec, H.L.Haridon, M.Salvi, D.Moutonnet and Y.Le Guillou: Electron Lett., 1989, 25, 718.
4. L.T.Canham: Appl. Phys. Lett., 1990, 57, 1046.
5. T.Kimura, A.Yokoi, H.Horiguchi, R.Saito, T.Ikoma and A.Saito: Appl. Phys. Lett., 1994, 65, 983.
6. X.Zhao, S.Komuro, S.Maruyama, H.Isshiki, Y.Aoyagi and T.Sugano: Mater. Res. Soc. Symp. Proc., 1996, 422, 143.
7. X.Zhao, S.Komuro, H.Isshiki, S.Maruyama, Y.Aoyagi and T.Sugano: Appl. Surf. Sci., 1997, 113/114, 121.
8. Z.Feng and R.Tsu: Porous Silicon, World Scientific, 1994, 1.
9. V.Petrova-Koch, T.Muschik, A.Kux, B.K.Meyer, F.Koch and V.Lehmann: Appl. Phys. Lett., 1992, 61, 943.
10. Y.Kanemitsu, K.Suzuki, Y.Masumoto, T.Komatsu, K.Sato, S.Kyushin and H.Matsumoto: Solid State Commun., 1993, 86, 545.
11. A.Taguchi, H.Nakagome and K.Takahei: J. Appl. Phys., 1991, 70, 5604.
12. X.Zhao, K.Hirakawa and T.Ikoma: Proc. of 2rd ICMPC for VLSI, Shanghai, 1991, 549.
13. F.Prioro, G.Franzo, S.Coffa and A.Carnera: Phys. Rev., 1998, B57, 4443.