A tunable quantum-dot device based on cross-bar graphene nanoribbon structures

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 8, 2009, Pages 4580-4585

  Wang, Z F ^a   Shi, Q W ^a   Chen, Jie ^b,c  

^a UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA   (China)

^b UNIVERSITY OF ALBERTA   (Canada)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

Graphene; Nanoelectronics; Random access memory; Tight binding model

Indexed keywords

CROSS JUNCTION; CROSS-BAR STRUCTURES; DISCRETE LEVELS; GATE VOLTAGES; GRAPHENE; GRAPHENE NANO-RIBBON; GRAPHENES; NANOELECTRONIC DEVICES; QUANTUM DOT; QUANTUM DOTS; RANDOM ACCESS MEMORIES; RANDOM-ACCESS MEMORY; SPATIAL CONFINEMENT; TIGHT-BINDING MODEL;

GRAPHITE; INTEGRATED CIRCUIT LAYOUT; NANOELECTRONICS; RANDOM ACCESS STORAGE; SEMICONDUCTOR QUANTUM DOTS;

STRUCTURAL DESIGN;

EID: 70350381120     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.1078     Document Type: Article

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