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Volumn 17, Issue 21, 2009, Pages 18571-18580

Optical modulation in silicon waveguides via charge state control of deep levels

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROMAGNETIC WAVE ABSORPTION; LIGHT ABSORPTION; LIGHT EXTINCTION; MODULATION; SEMICONDUCTOR DEVICES; SILICON ON INSULATOR TECHNOLOGY;

EID: 70350329304     PISSN: None     EISSN: 10944087     Source Type: Journal    
DOI: 10.1364/OE.17.018571     Document Type: Article
Times cited : (11)

References (15)
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    • (2006) J. Vac. Sci. Technol. A , vol.24 , Issue.3 , pp. 783-786
    • Knights, A.P.1    Bradley, J.D.B.2    Gou, S.H.3    Jessop, P.E.4
  • 3
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    • In-line channel power monitor based on Helium ion implantation in silicon-on-insulator waveguides
    • Y. Liu, C. W. Chow, W. Y. Cheung, and H. K. Tsang, "In-line channel power monitor based on Helium ion implantation in silicon-on-insulator waveguides," IEEE Photon. Technol. Lett. 18(17), 1882-1884 (2006).
    • (2006) IEEE Photon. Technol. Lett. , vol.18 , Issue.17 , pp. 1882-1884
    • Liu, Y.1    Chow, C.W.2    Cheung, W.Y.3    Tsang, H.K.4
  • 4
    • 2842533337 scopus 로고
    • Infrared absorption and photoconductivity in irradiated silicon
    • H. Y. Fan, and A. K. Ramdas, "Infrared absorption and photoconductivity in irradiated silicon," J. Appl. Phys. 30(8), 1127-1134(1959).
    • (1959) J. Appl. Phys. , vol.30 , Issue.8 , pp. 1127-1134
    • Fan, H.Y.1    Ramdas, A.K.2
  • 5
    • 4244205977 scopus 로고
    • Infrared spectroscopy of divacancy-associated radiation-induced absorption bands in silicon
    • C. S. Chen, and J. C. Corelli, "Infrared spectroscopy of divacancy-associated radiation-induced absorption bands in silicon," Phys. Rev. B 5(4), 1505-1517 (1972).
    • (1972) Phys. Rev. B , vol.5 , Issue.4 , pp. 1505-1517
    • Chen, C.S.1    Corelli, J.C.2
  • 7
    • 0033890293 scopus 로고    scopus 로고
    • Impact of the divacancy on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes
    • E. Simoen, C. Claeys, E. Gaubas, and H. Ohyama, "Impact of the divacancy on the generation-recombination properties of 10 MeV proton irradiated Float-Zone silicon diodes," Nucl. Instrum. Methods Phys. Res. A 439(23), 310-318 (2000).
    • (2000) Nucl. Instrum. Methods Phys. Res. A , vol.439 , Issue.23 , pp. 310-318
    • Simoen, E.1    Claeys, C.2    Gaubas, E.3    Ohyama, H.4
  • 8
    • 0028409611 scopus 로고
    • Efficiency improvements of silicon solar cells by the Impurity photovoltaic effect
    • M. J. Keevers, and M. A. Green, "Efficiency improvements of silicon solar cells by the Impurity photovoltaic effect," J. Appl. Phys. 75(8), 4022-4031 (1994).
    • (1994) J. Appl. Phys. , vol.75 , Issue.8 , pp. 4022-4031
    • Keevers, M.J.1    Green, M.A.2
  • 9
    • 0020780502 scopus 로고
    • Measurement of concentration and photoionization cross section of indium in silicon
    • G. J. Parker, S. D. Brotherton, I. Gale, and A. Gill, "Measurement of concentration and photoionization cross section of indium in silicon," J. Appl. Phys. 54(7), 3926-3929 (1983).
    • (1983) J. Appl. Phys. , vol.54 , Issue.7 , pp. 3926-3929
    • Parker, G.J.1    Brotherton, S.D.2    Gale, I.3    Gill, A.4
  • 11
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    • Silvaco Data Systems Inc, © 1984-2008. [online]
    • Silvaco Data Systems Inc, © 1984-2008. [online]. Available: www.silvaco.com.
  • 12
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    • RSoft Design Group, Inc., © 2002. [online]
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  • 14
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    • Determination of solid solubility limit of in and Sb in Si using bonded silicon-on-insulator (SOI) substrate
    • Nara, Japan
    • A. Sato, K. Suzuki, H. Horie, and T. Sugii, "Determination of Solid Solubility Limit of In and Sb in Si using Bonded Silicon-On-Insulator (SOI) Substrate." in Proc. IEEE 1995 Int. Confi on Microelectronic Test Structures. (Nara, Japan, vol. 8,1995) pp. 259-263.
    • (1995) Proc. IEEE 1995 Int. Confi on Microelectronic Test Structures , vol.8 , pp. 259-263
    • Sato, A.1    Suzuki, K.2    Horie, H.3    Sugii, T.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.