The effect of doping type and concentration on optical absorption via implantation induced defects in silicon-on-insulator waveguides

Conference on Optoelectronic and Microelectronic Materials and Devices, Proceedings, COMMAD

Volumn , Issue , 2008, Pages 152-155

  Logan, D F ^a   Jessop, P E ^a   Knights, A P ^a   Gwilliam, R M ^b   Halsall, M P ^c  

^a MCMASTER UNIVERSITY   (Canada)

^b UNIVERSITY OF SURREY   (United Kingdom)

^c UNIVERSITY OF MANCHESTER   (United Kingdom)

Author keywords

Absorption; Integrated optics; Ion implantation; Silicon; Waveguides

Indexed keywords

BAND GAPS; CHARGE STATE; EFFECT OF DOPING; IMPLANTATION-INDUCED DEFECTS; INTEGRATED OPTICAL DEVICES; INTRINSIC LOSS; OPTICAL ABSORPTIONS; SILICON-ON-INSULATOR WAVEGUIDES; SOI WAVEGUIDES;

ABSORPTION; BORON; DOPING (ADDITIVES); INTEGRATED CIRCUITS; INTEGRATED OPTICS; ION BOMBARDMENT; ION IMPLANTATION; OPTICAL INSTRUMENTS; OPTICAL MATERIALS; PHOSPHORUS; PHOTONICS;

WAVEGUIDES;

EID: 64849114022     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/COMMAD.2008.4802114     Document Type: Conference Paper

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