Theoretical investigation of new quantum-cross-structure device as a candidate beyond CMOS

Materials Research Society Symposium Proceedings

Volumn 1067, Issue , 2008, Pages 1-6

  Kondo, Kenji ^a   Kaiju, Hideo ^a   Ishibashi, Akira ^a  

^a HOKKAIDO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CMOS INTEGRATED CIRCUITS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; MOLECULES; NANORIBBONS;

CONDUCTANCE PEAKS; COUPLING CONSTANTS; HIGH DENSITY MEMORY; QUANTUM SIZE EFFECTS; SWITCHING DEVICES; THEORETICAL INVESTIGATIONS; THREE-DIMENSIONAL ELECTRONS; TWO-DIMENSIONAL ELECTRON SYSTEM (2DES);

ELECTRONS;

EID: 70350320702     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-1067-b03-01     Document Type: Conference Paper

References (8)

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