Controlled growth of heteroepitaxial zinc oxide nanostructures on gallium nitride

Journal of Nanoscience and Nanotechnology

Volumn 9, Issue 7, 2009, Pages 4383-4387

  Kong, Bo Hyun ^a   Kim, Dong Chan ^a   Mohanta, Sanjay Kumar ^a   Han, Won Suk ^a   Cho, Hyung Koun ^a   Hong, Chang Hee ^b   Kim, Hyung Gu ^b  

^a Sungkyunkwan University   (South Korea)

^b Chonbuk National University   (South Korea)

Author keywords

GaN; Heteroepitaxi; Strain; TEM; ZnO

Indexed keywords

CONTROLLED GROWTH; CRITICAL NUCLEI; DISLOCATION DENSITIES; GAN; HETEROEPITAXI; HETEROEPITAXIAL; INITIAL STAGES; INTERFACIAL LAYER; METALORGANIC CHEMICAL VAPOR DEPOSITION; MORPHOLOGICAL CHANGES; NUCLEATION DENSITIES; PEAK POSITION; RESIDUAL STRAINS; SURFACE PITS; TEM; ZNO;

COALESCENCE; EPITAXIAL FILMS; EPITAXIAL LAYERS; FILM GROWTH; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH TEMPERATURE; NANOSTRUCTURES; SEMICONDUCTING ZINC COMPOUNDS; STRAIN; ZINC; ZINC OXIDE;

SEMICONDUCTING GALLIUM;

EID: 70350317581     PISSN: 15334880     EISSN: None     Source Type: Journal    
DOI: 10.1166/jnn.2009.M64     Document Type: Conference Paper

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