Device performance of graphene nanoribbon field effect transistors with edge roughness effects: A computational study

Proceedings - 2009 13th International Workshop on Computational Electronics, IWCE 2009

Volumn , Issue , 2009, Pages

  Leong, Zuan Yi ^a,b   Lam, Kai Tak ^a   Liang, Gengchiau ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

Author keywords

Edge roughness; FET; Graphene; Nanoribbon; NEGF

Indexed keywords

EDGE ROUGHNESS; FET; GRAPHENE; NANORIBBON; NEGF;

ELECTRONICS ENGINEERING; GRAPHITE; IONIC CONDUCTION; MESFET DEVICES; SCHOTTKY BARRIER DIODES;

FIELD EFFECT TRANSISTORS;

EID: 70350218882     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IWCE.2009.5091104     Document Type: Conference Paper

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