Comparative study of losses in ultrasharp silicon-on-insulator nanowire bends

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 15, Issue 5, 2009, Pages 1406-1412

  Sheng, Zhen ^a,b,c   Dai, Daoxin ^a,b,c   He, Sailing ^a,b,c  

^a ZHEJIANG UNIVERSITY   (China)

^b JORCEP   (Sweden)

^c ZHEJIANG UNIVERSITY   (China)

Author keywords

Bending loss; Finite difference time domain (FDTD); Nanowire; Silicon on insulator (SOI); Ultrasharp; Waveguide

Indexed keywords

BENDING LOSS; BENDING RADIUS; COMPARATIVE STUDIES; DIFFERENT STRUCTURE; FDTD SIMULATIONS; FINITE DIFFERENCE TIME DOMAINS; FINITE-DIFFERENCE TIME DOMAIN (FDTD); MICRORING RESONATOR; MULTI-MODE EFFECTS; Q-FACTORS; SHORTER WAVELENGTH; SILICON ON INSULATOR; SILICON-ON-INSULATOR (SOI); SILICON-ON-INSULATORS; TE MODE; TM MODES; ULTRASHARP;

METHOD OF MOMENTS; MICROSENSORS; MODAL ANALYSIS; NANOWIRES; THREE DIMENSIONAL; WAVEGUIDES;

FINITE DIFFERENCE TIME DOMAIN METHOD;

EID: 70350191663     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2009.2013360     Document Type: Conference Paper

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